MOVPE for InP-based optoelectronic device application

application of upfc based on svpwm for power quality improvement

در سالهای اخیر،اختلالات کیفیت توان مهمترین موضوع می باشد که محققان زیادی را برای پیدا کردن راه حلی برای حل آن علاقه مند ساخته است.امروزه کیفیت توان در سیستم قدرت برای مراکز صنعتی،تجاری وکاربردهای بیمارستانی مسئله مهمی می باشد.مشکل ولتاژمثل شرایط افت ولتاژواضافه جریان ناشی از اتصال کوتاه مدار یا وقوع خطا در سیستم بیشتر مورد توجه می باشد. برای مطالعه افت ولتاژ واضافه جریان،محققان زیادی کار کرده ...

Characteristics of InP/InGaAs based Heterojunction Phototransistor for Optoelectronic Mixer

Characteristics of InP/InGaAs based Heterojunction Phototransistor for Optoelectronic Mixer By Seung-Chan Han School of Electrical and Electronic Engineering College of Engineering Yonsei University Wireless communication is becoming an crucial area of today’s life. With chasing this trend, there are continuously growing demands for ultra-wideband transmission due to insufficiency of available ...

Photoluminescence evolution in InAs/InP quantum dots grown by MOVPE

Self-assembled quantum dots of InAs have been grown on InP substrates by metal-organic vapour phase epitaxy. The effect of the growth temperature and the growth rate on the morphology and the optical properties of the quantum dots is studied using atomic force microscopy and photoluminescence spectroscopy. The spectral shape of the low temperature photoluminescence depends strongly on the growt...

InP/InGaAS Symmetric Gain Optoelectronic Mixers

Intermixing of InP-based multiple quantum wells for integrated optoelectronic devices

The intermixing characteristics of three widely used combinations of InP based quantum wells (QW) are investigated using the impurity-free vacancy disordering (IFVD) technique. We demonstrate that the bandgap energy shift is highly dependent on the concentration gradient of the as-grown wells and barriers, as well as the thickness of the well, with thinner wells more susceptible to interdiffusi...